IRFZ44N Datasheet – 44n Vdss = 55V, Power MOSFET – IR. Typical Output Characteristics. 5mohm irfz Id= 49A), alldatasheet, datasheet Datasheet. IRFZ44 Datasheet. IRFZ44N datasheet IRFZ44N pdf, Datasheet search site for Electronic Components 44n , triacs, Semiconductors, , IRFZ44N datasheets, diodes, datasheet, alldatasheet, IRFZ44N circuit : ISC - isc N- Channel MOSFET Transistor, integrated circuits other semiconductors. Typical Output Characteristics Fig 3. 44n The TO- 220 package is universally preferred for all commercial- industrial applications at power dissipation levels to approximately 50 watts. Irfz 44n datasheet. datasheetcatalog. Parameters and Characteristics. Philips SemiconductorsProduct specificationN- channel enhancement modeIRFZ44NTrenchMOSTM transistorGENERAL DESCRIPTIONQUICK REFERENCE DATAN- channelenhancement datasheet search datasheets, integrated circuits, diodes , Datasheet search site for Electronic Components , Semiconductors other semiconductors.
Advanced Process Technology Ultra Low On- Resistance Dynamic dv/ dt Rating 175° C Operating Temperature 44n Fast Switching Fully Avalanche Rated. IRFZ44N 55V Single N- channel HexFET Power MOSFET in a TO- 220AB Package. Dynamic dv/ dt Rating Repetitive irfz Avalanche Rated 175° C Operating Temperature Ease of Paralleling Fast Switching for High Efficiency Simple Drive Requirements. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry. Normalized On- Resistance Vs. irfz Case: JEDEC TO- 220AB molded plastic body Terminals: Leads solderable. 44n IRFZ44N Datasheet IRFZ44N Data sheet, free, IRFZ44N, IRFZ44N PDF, IRFZ44N pdf, datenblatt, irfz Electronics IRFZ44N, alldatasheet, IRFZ44N manual, datasheet Datasheets.
Typical Transfer Characteristics Fig 4. com Datasheets for electronics irfz components. Irfz 44n datasheet. IRFZ44N datasheet IRFZ44N circuit : IRF - Power MOSFET( Vdss= 55V, IRFZ44N datasheets, IRFZ44N pdf Rds( on) = 17. UNIT 44n standard level field- effect power transistor in a plastic envelope using VDS Drain- source voltage 55 V ’ trench’ technology. The device ID Drain current ( DC) 49 A. This datasheet is subject to change without notice. Advanced irfz HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. Units RθJC Junction- to- Case – – – 1.
According to the IRFZ44 datasheet this is a third generation Power MOSFET that provide the best combination of fast 44n switching ruggedized device design, low on- resistance cost- effectiveness. The TO- 220AB package is universially preferred for commercial- industrial applications at power dissipation levels to approximately 50 W. Electronic Component Catalog. IRFZ44N Transistor Datasheet IRFZ44N Equivalent PDF Data Sheets. Temperature Fig 2.
IRFZ44N datasheet, IRFZ44N circuit, IRFZ44N data sheet : PHILIPS - N- channel enhancement mode TrenchMOS transistor, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. IRFZ44N datasheet, IRFZ44N datasheets, IRFZ44N pdf, IRFZ44N circuit : PHILIPS - N- channel enhancement mode TrenchMOS transistor, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. IRFZ44N datasheet, cross reference, circuit and application notes in pdf format. The Datasheet Archive.
irfz 44n datasheet
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